نمایش نتایج جستجو برای
نام مجله: Modern Physics Letters B
موارد یافت شده: 25
1 - The effect of silver concentration and calcination temperature on structural and optical properties of ZnO:Ag nanoparticles (چکیده)2 - The effects of different polymerization agents on structural and optical properties of (K0.5Na0.5)NbO3nanopowders synthesized by a facile green route (چکیده)
3 - CHARACTERIZATION AND ELECTROCHROMIC PROPERTIES OF VANADIUM OXIDE THIN FILMS PREPARED VIA SPRAY PYROLYSIS (چکیده)
4 - HIGH PRESSURE ELECTRICAL RESISTIVITY OF COMPOSITION CONTROLLED Nd-123 BASED BULK MATERIAL (چکیده)
5 - EXCESS FLUCTUATION CONDUCTIVITY AND SUPERCONDUCTING PARAMETERS OF CaLa-DOPED Nd-123 (چکیده)
6 - Structural and magnetoelastic properties of Y3Fe27.2Cr1.8 and Ce3Fe25Cr4 ferromagnetic compounds (چکیده)
7 - ELECTRONIC AND THERMOELECTRIC PROPERTIES OF PURE AND ALLOYS In2O3 TRANSPARENT CONDUCTORS (چکیده)
8 - Monte Carlo Simulation of Steady-State Transport in Submicrometer InP and GaAs n+ i(n) n+ Diode (چکیده)
9 - CHARACTERIZATION OF ZINC OXIDE NANOPOWDERS DOPED WITH MnO (چکیده)
10 - Compaison Of Two-Valley Hydrodynamic Model In Bulk Sic And Zno Materials (چکیده)
11 - Comparison of SiC and ZnO Field Effect Transistors for High Power Applications (چکیده)
12 - LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION (چکیده)
13 - COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD (چکیده)
14 - First principles Study of the effect of Orbital- Dependent Exchange Correlation Potential on the Electronic and Optical Properties of Pb(Zr1-x Tix) O3 (چکیده)
15 - COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING (چکیده)
16 - Monte Carlo Simlation of Electron Transport in Wurtzite Phase GaN MESFET Including Trapping Effect (چکیده)
17 - COMPARISON OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE AND ZINCBLENDE PHASE GaN AT ROOM TEMPERATURE (چکیده)
18 - Monte Carlo Simulations of Steady-State Transport in Wurtzite Phase GaN Submicrometer n+nn+ Diode (چکیده)
19 - COMPARISON OF HIGH FIELD STEADY STATE AND TRANSIENT ELECTRON TRANSPORT IN WURTZITE GaN, AlN AND InN (چکیده)
20 - EFFECT OF VARIOUS MATERIAL PARAMETERS ON THE CALCULATED VELOCITY-FIELD RELATION IN Al0.2Ga0.8N AT ROOM TEMPERATURE (چکیده)
21 - Temperature Dependence of High Field Electron Transport Properties in Wurtzite Phase GaN for Device Modeling (چکیده)
22 - COMPARISON OF STEADY-STATE AND TRANSIENT ELECTRON TRANSPORT IN InAs, InP AND GaAs (چکیده)
23 - MONTE CARLO MODELING OF HOT ELECTRON TRANSPORT IN BULK AlAs, AlGaAs AND GaAs AT ROOM TEMPERATURE (چکیده)
24 - Comparison of High and Low Field Electron Transport in Al0.2Ga0.8N, AlN and GaN (چکیده)
25 - DISCRETIZATION METHOD OF HYDRODYNAMIC EQUATIONS FOR SIMULATION OFGaNMESFETs (چکیده)
